英飛凌IGBT模塊BSM200GB120DN2
| 型 號： | BSM200GB120DN2 |
| 報(bào) 價： | 888 |
IGBT（Insulated Gate Bipolar Transistor），絕緣柵雙極型晶體管，是由BJT（雙極型三極管）和MOS（絕緣柵型場效應(yīng)管）組成的復(fù)合全控型電壓驅(qū)動式功率半導(dǎo)體器件, 兼有MOSFET的高輸入阻抗和GTR的低導(dǎo)通壓降兩方面的優(yōu)點(diǎn)。GTR飽和壓降低，載流密度大，但驅(qū)動電流較大;MOSFET驅(qū)動功率很小，開關(guān)速度快，但導(dǎo)通壓降大，載流密度小
詳細(xì)資料：
北京京誠宏泰科技原裝正品現(xiàn)貨銷售英飛凌IGBT模塊BSM200GB120DN2
集電極—射極擊穿電壓: 1200 V
集電極—射極飽和電壓: 3.2 V
集電極zui大連續(xù)電流 Ic: 200 A
柵極—射極漏泄電流: 400 nA
功率耗散: 1.4 KW
封裝 / 箱體: IS5a ( 62 mm )
集電極—發(fā)射極zui大電壓 VCEO: 1200 V
柵極/發(fā)射極zui大電壓: 20 V
zui大工作溫度: + 125℃
zui小工作溫度: - 40℃
適用于電焊機(jī) 感應(yīng)加熱 高頻率等高頻硬開關(guān)
BSM50GB60DLC 50A/600V/2U
BSM75GB170DN2 75A/1700V/2U
BSM75GB60DLC 75A/600V/2U
BSM100GB170DN2 100A/1700V/2U
BSM100GB60DLC 100A/600V/2U
BSM150GB170DN2 150A/1700V/2U
BSM150GB60DLC 150A/600V/2U
BSM200GB170DLC 200A/1700V/2U
BSM200GB60DLC 200A/600V/2U
BSM25GAL120DN2 25A/1200V/2U
BSM300GB60DLC 300A/600V/2U
BSM50GAL120DN2 50A/1200V/2U
BSM25GB120DN2 25A/1200V/2U
BSM75GAL120DN2 75A/1200V/2U
BSM35GB120DN2 35A/1200V/2U
BSM100GAL120DN2 100A/1200V/2U
BSM50GB120DN2 50A/1200V/2U
BSM150GAL120DN2 150A/1200V/2U
BSM75GB120DN2 75A/1200V/2U
BSM200GAL120DN2 200A/1200V/2U
BSM100GB120DN2K 100A/1200V/2U
BSM300GAL120DN2 300A/1200V/2U
BSM35GB120DLC 35A/1200V/2U
BSM100GAL120DLCK 100A/1200V/2U
BSM50GB120DLC 50A/1200V/2U
BSM150GAL120DLC 150A/1200V/2U
BSM75GB120DLC 75A/1200V/2U
BSM200GAL120DLC 200A/1200V/2U
BSM150GB170DLC 150A/1700V/2U
BSM300GAL120DLC 300A/1200V/2U
BSM100GB120DN2 100A/1200V/2U
BSM75GAR120DN2 75A/1200V/2U
BSM150GB120DN2 150A/1200V/2U
BSM100GAR120DN2 100A/1200V/2U
BSM200GB120DN2 200A/1200V/2U
BSM150GAR120DN2 150A/1200V/2U
BSM300GB120DN2 300A/1200V/2U
BSM200GAR120DN2 200A/1200V/2U
BSM100GB120(DLC 100A/1200V/2U
BSM200GB120DLC 200A/1200V/2U
BSM150GB120DLC 150A/1200V/2U
BSM300GB120DLC 300A/1200V/2U
BSM50GB170DN2 50A/1700V/2U
BSM300GAR120DN2 300A/1200V/2U
BSM100GB120DLCK 100A/100V/2U
